Abstract
In this letter, we demonstrated dopant-segregated Schottky (DSS) p-MOSFET with gate-all-around silicon-nanowire (SiNW) channel of 10 nm in diameter. The DSS transistor shows improved performance as compared to a reference Schottky barrier (SB) transistor without dopant segregation. The DSS transistor shows I-ON of 319 mu A/mu m at a low gate overdrive of -0.6 V, high I-ON/I-OFF ratio (similar to 10(5)), and short-channel performance with subthreshold slope similar to 90 mV/dec down to 100-nm gate length with relatively thick (6 nm) deposited gate oxide. The DSS transistor also shows significant reduction (similar to 40 x lower) in the series resistance as compared to the SB transistor. The origin of the improved performance of the DSS is the thin dopant layer segregated at the nickel monosilicide/SiNW point contact which results in the enhanced hole injection at the source side and the suppressed electron injection at the drain side.