Abstract
In this letter, the authors study the dopant activation and dopant distribution in a
Si
+
subamorphized Si (SAI-Si) when subjected to laser annealing (LA). The results show an enhanced boron activation in the SAI-Si in the nonmelt regime as compared to a crystalline Si
(
c
-
Si
)
. The enhancement is caused by a vacancy-rich surface generated by the
Si
+
preimplantation that promotes the incorporation of boron atoms into the substitutional sites. On the other hand, shallow-melt LA produces a similar boron activation in both SAI-Si and
c
-
Si
samples due to a melting that consumes the entire as-implanted profile and the vacancy-rich region.