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Effect of hydrostatic pressure in degenerate Ge1-xMnxTe
Journal article   Peer reviewed

Effect of hydrostatic pressure in degenerate Ge1-xMnxTe

S. T. Lim, J. F. Bi, K. L. Teo, Y. P. Feng, T. Liew and T. C. Chong
Applied physics letters, Vol.95(7), 072510
17/08/2009

Abstract

Physical Sciences Physics Physics, Applied Science & Technology
We utilize the effect of hydrostatic pressure to investigate the magnetotransport properties of degenerate p-Ge1-xMnxTe (x=0.10) ferromagnetic semiconductor. The Curie temperature was found to increase with pressure as 0.27 K/kbar, which can be understood on the basis of the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction mechanism. For sufficiently high carrier concentration of p(o)similar to 10(21) cm(-3), both the light holes from the L valence band and the heavy holes from the Sigma valence band contribute to the RKKY interaction. Additionally, a negative magnetoresistance is observed at low temperature and is found to decrease with pressure.
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https://doi.org/10.1063/1.3211990View
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