Effect of ion implantation on layer inversion of Ni silicided poly-Si

Journal article

Peer reviewed

P. S Lee, K. L Pey, D Mangelinck, J Ding, D. Z Chi, T Osipowicz, J. Y Dai and L Chant

Journal of the Electrochemical Society, Vol.149(9), pp.G505-G509

01/09/2002

Abstract

Condensed matter: structure, mechanical and thermal properties

Defects and impurities in crystals; microstructure

Doping and impurity implantation in germanium and silicon

Exact sciences and technology

Physics

Structure of solids and liquids; crystallography

url

https://doi.org/10.1149/1.1494828View

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Title: Effect of ion implantation on layer inversion of Ni silicided poly-Si
Creators - without role: P. S Lee - Duke-NUS Medical School
K. L Pey - Duke-NUS Medical School
D Mangelinck - Centre National de la Recherche Scientifique
J Ding - National University of Singapore
D. Z Chi - Duke-NUS Medical School
T Osipowicz - National University of Singapore
J. Y Dai - Centre National de la Recherche Scientifique
L Chant - Chartered Semiconductor Manufacturing, Limited, 738496, Singapore
Publication Details: Journal of the Electrochemical Society, Vol.149(9), pp.G505-G509
Publisher: Electrochemical Society
Identifiers: 9914319209846
Academic Unit: Engineering Product Development (EPD); Temasek Lab
Language: English
Resource Type: Journal article