Abstract
TDDB lifetime is an important reliability metric for ferroelectric devices, which is dependent on the complex interplay between a multitude of factors. Mechanisms such as oxygen vacancy generation, charge trapping and detrapping are relevant in the degradation physics of hafnia-based ferroelectric devices. A large difference in Time-to-Failure in Metal – Ferroelectric – Insulator - Semiconductor (MFIS) devices in response to Interrupted and Uninterrupted Constant Voltage Stressing was found, which underscores the significance of stress interruption on the degradation physics occurring in the device. However, the effect of interruptions during stressing in MFIS devices is relatively unexplored. This work aims to pave the way for the development of stressing schemes for the evaluation of ferroelectric devices with closer adherence to practical operating conditions.
•Effect of time between stressing on charge detrapping and device degradation•10 times smaller TTF in devices stressed with I-CVS compared to UI-CVS•Charge trapping and detrapping on defect generation is highly significant.