Abstract
In a Bipolar/MOS hybrid-mode environment, lateral p–n–p BJT in an active pMOS structure is employed for its high current gain and simple technology. In these designs, the presence of positive source-body voltage (VSB) causes the body current characteristics to deviate from that predicted by models in existing literature. In this paper, a new body current model suitable for hybrid-mode devices is developed. Temperature dependence of the body current in the range from 223 to 398K has also been modeled. In addition, the effects of temperature and positive VSB on parameters such as threshold voltage, effective channel length, external series resistance and saturation drain voltage, have also been discussed in the model. A multitude of experimental data has been presented to demonstrate the validity of the proposed model for a wide range of biases, temperatures and channel lengths.