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Effective work function modulation by sacrificial gate aluminum diffusion on HfON-based 14 nm NMOS devices
Journal article   Peer reviewed

Effective work function modulation by sacrificial gate aluminum diffusion on HfON-based 14 nm NMOS devices

C. Suarez-Segovia, C. Leroux, P. Caubet, F. Domengie, G. Reimbold, G. Romano, O. Gourhant, V. Joseph and G. Ghibaudo
Microelectronic engineering, Vol.147, pp.113-116
01/11/2015
DOI: https://doi.org/10.1016/j.mee.2015.04.062

Abstract

Engineering Engineering, Electrical & Electronic Nanoscience & Nanotechnology Optics Physical Sciences Physics Physics, Applied Science & Technology Science & Technology - Other Topics Technology
Sacrificial gate first process efficiency to further increase effective work function (WFeff) towards P+ by metallic aluminum diffusion is demonstrated in this work by combining capacitance vs voltage (CV) measurements on beveled oxides with different spectroscopic techniques. Aluminum diffusion role on WFeff is evidenced and is found to be simultaneously dependent of as-deposited aluminum dose and annealing temperature. (C) 2015 Elsevier B.V. All rights reserved.

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