Abstract
The incorporation of low-temperature (LT) GaAs intermediate layers grown at 230°C had been shown to have the effects of improving the crystalline quality of GaAs epilayers on Si. The use of this LT-GaAs intermediate layer between the GaAs nucleation layer and the GaAs overlayer has improved the photoluminescence (PL) peak intensity by about five times, and reduced the GaAs (004) X-ray diffraction full width at half maximum (FWHM) by 59 arcsecs. The PL results were subsequently confirmed by cathodoluminescence images. The dominant deep level electron trap in the LT-GaAs epilayer grown on Si substrate was the same as that found in LT-GaAs epilayer grown on GaAs substrate.