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Electrical characterization of platinum and palladium effects in nickel monosilicide/n-Si Schottky contacts
Journal article   Peer reviewed

Electrical characterization of platinum and palladium effects in nickel monosilicide/n-Si Schottky contacts

L.J. Jin, K.L. Pey, W.K. Choi, D.A. Antoniadis, E.A. Fitzgerald and D.Z. Chi
Thin solid films, Vol.504(1), pp.149-152
10/05/2006
DOI: https://doi.org/10.1016/j.tsf.2005.09.063

Abstract

SBH inhomogeneity Schottky barrier height (SBH) Thermionic emission model
The current versus voltage ( I– V) characteristics of Ni(Pt or Pd)Si/n-Si Schottky contacts annealed at 400 and 500 °C showed that the Schottky barrier height (SBH) of the contact increased from 0.67 to 0.80 eV with an addition of 10 at.% Pt into the Ni alloy film. On the other hand, both 5 and 10 at.% Pd resulted in the same amount of increase in the SBH. The forward-biased I– V characteristics of Ni alloy/Si contacts carried out at 93 to 300 K showed that at higher measured temperature (> 253 K), or at low measured temperature (< 253 K) but at higher bias (> 0.5 V), it can be modeled using the thermionic emission model with the SBH decreased and ideality factor increased with decreasing temperature. Excess current was observed when measured at T < 253 K and lower bias (< 0.5 V) which may be due to the local inhomogeneity of SBH.

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