Electronic band structures and optical gain spectra of strained wurtzite GaN-AlxGa1-xN quantum-well lasers

Journal article

Peer reviewed

YEE CHIA Yeo, T. C Chong, M.-F LI and WEI JUN Fan

IEEE journal of quantum electronics, Vol.34(3), pp.526-534

01/03/1998

Abstract

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Electron density of states and band structure of crystalline solids

Electron states

Exact sciences and technology

Fundamental areas of phenomenology (including applications)

Lasers

Optics

Physics

Semiconductor compounds

Semiconductor lasers; laser diodes

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Title: Electronic band structures and optical gain spectra of strained wurtzite GaN-AlxGa1-xN quantum-well lasers
Creators - without role: YEE CHIA Yeo - Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, 119260, Singapore, Singapore
T. C Chong - Duke-NUS Medical School
M.-F LI - National University of Singapore
WEI JUN Fan - National University of Singapore
Publication Details: IEEE journal of quantum electronics, Vol.34(3), pp.526-534
Publisher: Institute of Electrical and Electronics Engineers
Number of pages: 9
Identifiers: 9911406409846
Academic Unit: Temasek Lab
Language: English
Resource Type: Journal article