Electronic properties of barium chalcogenides from first-principles calculations : Tailoring wide-band-gap II-VI semiconductors

Journal article

Peer reviewed

G. Q Lin, HAO Gong and PING WU

Physical review. B, Condensed matter and materials physics, Vol.71(8), pp.085203.1-085203.5

01/02/2005

Abstract

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Electron density of states and band structure of crystalline solids

Electron states

Exact sciences and technology

Physics

Semiconductor compounds

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Title: Electronic properties of barium chalcogenides from first-principles calculations : Tailoring wide-band-gap II-VI semiconductors
Creators - without role: G. Q Lin - Institute of High Performance Computing
HAO Gong - Duke-NUS Medical School
PING WU - Singapore Science Park
Publication Details: Physical review. B, Condensed matter and materials physics, Vol.71(8), pp.085203.1-085203.5
Publisher: American Physical Society
Identifiers: 9912688109846
Academic Unit: EPD Pillar
Language: English
Resource Type: Journal article