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Epitaxial growth of ferromagnetic Co:TiO 2 thin films by co-sputtering
Journal article   Peer reviewed

Epitaxial growth of ferromagnetic Co:TiO 2 thin films by co-sputtering

G.C. Han, Y.H. Wu, M. Tay, K.B. Li, Z.B. Guo and T.C. Chong
Journal of magnetism and magnetic materials, Vol.268(1), pp.159-164
2004

Abstract

Epitaxial growth Magnetism Semiconductors Sputtering Titanium oxide
Epitaxial anatase Co:TiO 2 thin films were grown on LaAlO 3 (0 0 1) substrates by co-sputtering method. Structural and compositional properties were measured as a function of deposition parameters to explore the growth mechanism of the anatase films. Epitaxial anatase structure can be obtained at deposition temperatures ranged from 500°C to 750°C. magnetization measurements show that the saturation magnetization ( M s) increases as deposition temperature increases. At 750°C, M s is about 1.13 μ B/Co. X-ray diffraction results show that the sample has a superior anatase crystallinity with the full-width at half-maximum of 0.13°. It was found that M s is directly related with the crystallinity, i.e., M s increases as the crystallinity of samples improves.

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