Abstract
A series of superlatticelike (SLL) structure incorporated with two phase-change materials GeTe and Sb7Te3 was applied in lateral phase change memory. Power consumption and lifetime were used as two criteria to optimize the SLL structure. It was found that with the thickness ratio of GeTe to Sb7Te3 at 1.6, the RESET current could be as low as 1.5 mA and the endurance could reach as high as 5.3x10(6) cycles. By varying the thickness ratio of GeTe to Sb7Te3, the crystallization temperature of SLL structures and the performance of lateral phase change memory with these SLL structures can be controlled.