Growth of CrTe thin films by molecular-beam epitaxy

M.G. Sreenivasan; X.J. Hou; K.L. Teo; M.B.A. Jalil; T. Liew; T.C. Chong

doi:10.1016/j.tsf.2005.10.027

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Growth of CrTe thin films by molecular-beam epitaxy

Journal article

Peer reviewed

Growth of CrTe thin films by molecular-beam epitaxy

M.G. Sreenivasan, X.J. Hou, K.L. Teo, M.B.A. Jalil, T. Liew and T.C. Chong

Thin solid films, Vol.505(1), pp.133-136

18/05/2006

DOI: https://doi.org/10.1016/j.tsf.2005.10.027

Abstract

CrTe

Ferromagnetic

Molecular-beam epitaxy

We report the growth of Cr 1− δ Te films on (100) GaAs substrates using ZnTe buffer layers by solid-source molecular-beam epitaxial technique. RHEED patterns indicate a clear structural change during the initial stages of deposition. Temperature-dependent magnetization results reveal that different NiAs-related phases of Cr 1− δ Te can be obtained at different substrate temperatures. By varying the film thickness, a metastable zinc blende structure of CrTe could be obtained at lower substrate temperature.

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Title: Growth of CrTe thin films by molecular-beam epitaxy
Creators - without role: M.G. Sreenivasan - National University of Singapore
X.J. Hou - National University of Singapore
K.L. Teo - National University of Singapore
M.B.A. Jalil - National University of Singapore
T. Liew - Data Storage Institute
T.C. Chong - Data Storage Institute
Publication Details: Thin solid films, Vol.505(1), pp.133-136
Publisher: Elsevier B.V
Number of pages: 4
Identifiers: 9911403009846
Academic Unit: Temasek Lab
Language: English
Resource Type: Journal article

Growth of CrTe thin films by molecular-beam epitaxy

Abstract

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