High-Q Si-based inductor shielded with double-layer polysilicon for RF applications

Journal article

Peer reviewed

H. P. Tan, J. G. Ma, K. S. Yeo and M. A. Do

Microwave and optical technology letters, Vol.24(6), pp.366-367

20/03/2000

Abstract

CMOS integrated circuits

inductor on-chip

quality factor

1 Record Views

Title: High-Q Si-based inductor shielded with double-layer polysilicon for RF applications
Creators - without role: H. P. Tan - Nanyang Technological University
J. G. Ma - Nanyang Technological University
K. S. Yeo - Nanyang Technological University
M. A. Do - Nanyang Technological University
Publication Details: Microwave and optical technology letters, Vol.24(6), pp.366-367
Publisher: John Wiley & Sons, Inc
Number of pages: 2
Identifiers: 9911713909846
Academic Unit: Office of Provost
Language: English
Resource Type: Journal article