Improved Calculation of Charge Collection Probability From Within the Junction Well

Journal article

Peer reviewed

Vincent K. S Ong, Chee Chin Tan, Oka Kumiawan, K Radhakrishnan and Oka Kurniawan

IEEE transactions on electron devices, Vol.58(12), pp.4434-4437

01/12/2011

Abstract

Applied sciences

Compound structure devices

Electronics

Exact sciences and technology

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

1 Record Views

Title: Improved Calculation of Charge Collection Probability From Within the Junction Well
Creators - without role: Vincent K. S Ong - Nanyang Technological University
Chee Chin Tan - Nanyang Technological University
Oka Kumiawan - Singapore Polytechnic
K Radhakrishnan - Nanyang Technological University
Oka Kurniawan - ISTD Pillar
Publication Details: IEEE transactions on electron devices, Vol.58(12), pp.4434-4437
Publisher: Institute of Electrical and Electronics Engineers
Number of pages: 4
Identifiers: 9912459009846
Academic Unit: ISTD Pillar
Language: English
Resource Type: Journal article