Improved electrical performance of erbium silicide schottky diodes formed by Pre-RTA amorphization of Si

Journal article

Peer reviewed

E. J Tan, K. L Pey, D. Z Chi, P. S Lee and L. J Tang

IEEE electron device letters, Vol.27(2), pp.93-95

01/02/2006

Abstract

Applied sciences

Diodes

Electronics

Exact sciences and technology

Interfaces

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

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Title: Improved electrical performance of erbium silicide schottky diodes formed by Pre-RTA amorphization of Si
Creators - without role: E. J Tan - Nanyang Technological University
K. L Pey - Nanyang Technological University
D. Z Chi - Institute of Materials Research and Engineering
P. S Lee - Nanyang Technological University
L. J Tang - Institute of Microelectronics
Publication Details: IEEE electron device letters, Vol.27(2), pp.93-95
Publisher: Institute of Electrical and Electronics Engineers
Number of pages: 3
Identifiers: 9914226109846
Academic Unit: Engineering Product Development (EPD); Temasek Lab
Language: English
Resource Type: Journal article