Investigation of intrinsic dielectric breakdown mechanism in Cu/Low-κ interconnect system

Journal article

Peer reviewed

Nam Hwang, TAM LYN Tan, CHENG KUO Cheng, Anyan DU, CHEE LIP Gan and KIN LEONG Pey

IEEE electron device letters, Vol.27(4), pp.234-236

01/04/2006

Abstract

Applied sciences

Design. Technologies. Operation analysis. Testing

Electronics

Exact sciences and technology

Integrated circuits

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

Testing, measurement, noise and reliability

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Title: Investigation of intrinsic dielectric breakdown mechanism in Cu/Low-κ interconnect system
Creators - without role: Nam Hwang - Institute of Microelectronics
TAM LYN Tan - Nanyang Technological University
CHENG KUO Cheng - Institute of Microelectronics
Anyan DU - Institute of Microelectronics
CHEE LIP Gan - Nanyang Technological University
KIN LEONG Pey - Nanyang Technological University
Publication Details: IEEE electron device letters, Vol.27(4), pp.234-236
Publisher: Institute of Electrical and Electronics Engineers
Number of pages: 3
Identifiers: 9914225909846
Academic Unit: Engineering Product Development (EPD); Temasek Lab
Language: English
Resource Type: Journal article