Abstract
Laser-induced Ni(Pt) germanosilicide formation on
Si
1
−
x
Ge
x
∕
Si
substrate has resulted in the formation of smooth Ni(Pt) germanosilicide/Si interface with minimum interface roughness which is preferred as a contact material. A confined (self-limiting) melting phenomenon occurred during the laser-induced silicidation process at laser fluence of
0.4
J
cm
−
2
(just at the melting threshold of the sample). This phenomenon is caused by significant differences in material properties of
Si
1
−
x
Ge
x
alloy and Si substrates. Formation of highly textured
[
Ni
1
−
v
(
Pt
)
v
]
(
Si
1
−
y
Ge
y
)
phase was detected in the sample after 20-pulsed laser thermal annealing at
0.4
J
cm
−
2
. The formation mechanism of the Ni(Pt) monogermanosilicide is discussed.