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Laser-induced melt-mediated Ni(Pt) germanosilicide formation on condensed Si1-xGex/Si substrates
Journal article

Laser-induced melt-mediated Ni(Pt) germanosilicide formation on condensed Si1-xGex/Si substrates

Y. Setiawan, P. S. Lee, S. Balakumar, K. L. Pey and X. C. Wang
Electrochemical and solid-state letters, Vol.11(9), pp.H262-H265
01/01/2008

Abstract

Electrochemistry Materials Science Materials Science, Multidisciplinary Physical Sciences Science & Technology Technology
Laser-induced melt-mediated Ni-based germanosilicide has been formed on condensed SiGe substrates (with 40% Ge). Pure Ni germanosilicide formation was plagued by the presence of amorphous oxygen-rich globules. Platinum alloying has greatly improved the morphology of the laser-induced Ni(Pt) germanosilicide with the alleviation of oxygen incorporation during laser annealing. This results in an improvement in the surface roughness and electrical conductivity of the germanosilicide film. Low affinity of Pt toward oxygen is believed to have resulted in this improvement. (C) 2008 The Electrochemical Society.
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https://doi.org/10.1149/1.2953682View
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