Abstract
The formation of Ni silicides has been improved with Ni(Pt)-silicidation on the mixed phase Si films which were grown using the rapid thermal chemical vapor deposition technique. The Ni(Pt)Si was stabilized up to 800degreesC and layer inversion was retarded beyond 600degreesC. The enhanced stability of Ni(Pt)Si is attributed to the change in Gibbs free energy, The reduced layer inversion is due to the modification of the Si microstructure that has played an important role in the layer inversion. The enlarged poly-Si grains from the mixed phase film,,, are due to the silicide enhanced mediated crystallization using NiSi2 precipitates as seeds besides the preexisting Si crystallites. (C) 2002 The Electrochemical Society.