Abstract
Cr-doped ZnTe diluted magnetic semiconductor thin films were grown on semi-insulating GaAs [001] substrates at low temperature by solid-source molecular-beam epitaxy. Zn
1−
x
Cr
x
Te samples with Cr concentrations
x
=
0.026 and
x
=
0.141 were prepared. The magnetization versus magnetic field (
M–
H) measurement showed a clear hysteresis loop at low temperature for these samples. For higher Cr doping with nominal Cr concentration of
x
>
0.18, we obtained a Curie temperature of 365 K; the highest reported so far for thin film sample. However, this strong ferromagnetic momentum could possibly be due to Cr
1−
δ
Te precipitate in the Cr-doped ZnTe system.