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MOSFET Drain Current Noise Modeling With Effective Gate Overdrive and Junction Noise
Journal article   Peer reviewed

MOSFET Drain Current Noise Modeling With Effective Gate Overdrive and Junction Noise

L. H. K. Chan, K. S. Yeo, K. W. J. Chew, S. N. Ong, X. S. Loo, C. C. Boon and M. A. Do
IEEE electron device letters, Vol.33(8), pp.1117-1119
01/08/2012

Abstract

High-frequency noise Integrated circuit modeling Junctions Logic gates moderate inversion (MI) MOSFET Noise Semiconductor device modeling Silicon subthreshold Thermal noise
In this letter, a drain current noise model that includes the channel thermal noise and the shot noise generated at the source-bulk junction and the drain-bulk junction is presented. A unified analytical expression is derived to ensure excellent continuity with smooth transition of drain current noise from weak- to strong-inversion regimes, including the moderate-inversion region. Excellent agreement between simulated and extracted noise data has shown that the proposed model is accurate over different dimensions and operating conditions.

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