Abstract
The authors investigate the magnetic and transport behaviors of
Ge
1
−
x
Mn
x
Te
thin films with high Mn composition
(
x
=
0.98
)
grown by solid-source molecular-beam epitaxy. The temperature-dependent magnetization
(
M
-
T
)
gives a Curie paramagnetic temperature
θ
p
∼
120
K
, in contrast to the Curie temperature of
T
C
∼
95
K
obtained from the Arrott plot and temperature-dependent resistivity measurement. The resistivity and
M
-
T
behaviors can be attributed to weak localization effect of disordering. The authors discussed the ferromagnetism in
Ge
0.02
Mn
0.98
Te
on the basis of the Ruderman-Kittel-Kasuya-Yoshida interaction and clustering effect.