Abstract
We propose a ballistic device model which harnesses the Dresselhaus spin-orbit coupling effect to induce spin polarization ∣P∣ by constraining the transverse electron wave vector kx to specific, quantized values and aligning the crystalline c axis along the electron conduction path z. ∣P∣ induced in this magnetoelectronic device is further enhanced by applying a periodic system of delta magnetoelectric barriers that constitute a net “zero-A” periodic unit. Calculations for GaAs, GaSb, and InSb show a field enhancement of ∣P∣ from peak 2%–3% to 10%–80% near the conduction band. Magnetic and electric potentials have been shown to modulate ∣P∣ with few gate elements required.