Abstract
Tantalum adhesion on SiLK™ was investigated using first-principles method based on density functional theory. Phenylene groups were found to play a major role and the adjacent semi-benzene rings also contribute significantly to Ta adhesion on SiLK™. In addition, the degradation effects of
H
2
∕
He
reactive plasma clean on Ta adhesion on SiLK™ was investigated. Based on our findings, argon plasma treatment was suggested and implemented after reactive plasma cleaning process, which resulted in integration of SiLK™ with Cu up to seven metal layers.