- Title
- Modified Percolation Model for Polycrystalline High-κ Gate Stack With Grain Boundary Defects
- Creators - without role
- Nagarajan Raghavan - Nanyang Technological UniversityKIN LEONG Pey - Singapore University of Technology and DesignKalya Shubhakar - Nanyang Technological UniversityMichel Bosman - Agency for Science, Technology and Research
- Publication Details
- IEEE electron device letters, Vol.32(1), pp.78-80
- Publisher
- Institute of Electrical and Electronics Engineers
- Number of pages
- 3
- Identifiers
- 9912354609846
- Academic Unit
- Engineering Product Development (EPD); Office of Education & Innovation
- Language
- English
- Resource Type
- Journal article
Journal article
Modified Percolation Model for Polycrystalline High-κ Gate Stack With Grain Boundary Defects
IEEE electron device letters, Vol.32(1), pp.78-80
2011
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