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Molecular beam epitaxial growth and characterizations of Co–Mn–Ge Heusler thin films
Journal article   Peer reviewed

Molecular beam epitaxial growth and characterizations of Co–Mn–Ge Heusler thin films

C.H. Sim, V. Ko, K.L. Teo, Z.B. Guo, T. Liew and T.C. Chong
Journal of crystal growth, Vol.308(2), pp.392-397
15/10/2007

Abstract

A1. Reflection high-energy electron diffraction A3. Molecular beam epitaxy B1. Heusler alloy B3. Spintronics
We report on the growth of Co–Mn–Ge thin films on various substrates using low-temperature molecular beam epitaxy. The magnetic and transport properties of the films were investigated. The close-to-stoichiometric Co 2MnGe film grown on GaAs(1 0 0) shows ferromagnetism and exhibits anomalous Hall effects at room temperature. The irreversibility of zero-field-cooled and field-cooled measurements suggests the formation of superparamagnetic clusters. On the other hand, the growth of Co 2MnGe films on Ge buffer layer and Si(1 0 0) substrate is found to be unsuitable due to the degraded crystal qualities with weak magnetization signals.

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