Abstract
High thermal conductivity and ambipolar mobility are highly desirable for semiconductors in electronics and have been observed in bulk boron arsenide (BAs). In this work, we explore the scaling behavior of a monolayer hydrogenated BAs field-effect transistor (ML H-BAs FET) by employing ab initio quantum transport methods. Both the armchair- and zigzag-directed ML H-BAs FETs can well satisfy the requirements of the International Technology Roadmap for Semiconductors even if the gate length is scaled down to 2 similar to 3 nm for high-performance applications. The excellent nand p-type symmetry of bulk BAs is well preserved in the ML H-BAs FET along with the zigzag direction but is lost in the armchair direction. However, such asymmetry can be suppressed by applying uniaxial compressive strain owing to the broken valence band degeneracy. Our findings provide important theoretical insights into transport symmetry and the scaling behavior of ML H-BAs FETs.