Abstract
A new generation of complementary BiCMOS digital gates for low-voltage environments will be presented. These include inverters and an AND gate. These circuits are particularly suitable for the scaled sub-half micrometer, 1.2 V BiCMOS generation and are designed to give full voltage swings at relatively high speeds. The number of devices used in the new circuit configuration is, by far, fewer than that in the recently reported circuits. The superiority of the new circuits has been confirmed by comparing their performance in terms of speed, voltage swing, power dissipation, noise margin and chip area, with the CMOS and that of the recently reported circuits. An analytical transient model for the basic circuit configuration is presented, and HSPICE simulations have been used to characterize the circuits. The experimental results obtained from the fabricated chip have also verified the functionality of the proposed circuit.