Abstract
The roles of the Pt in Ni-(5 at.% Pt) alloy reaction on narrow c-Si (100) and polysilicon (poly-Si) lines by rapid thermal annealed (RTP) in the range of 400 to 900 °C were studied. By the addition of Pt as an alloying element, the phase stability of NiSi on Si(100) was enhanced and the retardation of NiSi
2 was achieved by forming Ni(Pt)Si up to 900 °C. In addition, the agglomeration behavior has slightly improved. On narrow poly-Si lines, the addition of Pt improves slightly the layer inversion, which involves the bilayer reversal of silicide and poly-Si. Despite this, the Ni(Pt)Si phase on the narrow poly-Si lines is remarkably stable up to 800–900 °C. The implementation of the developed Ni(Pt) alloy silicide scheme to the state-of-the-art transistors shows that the electrical performance of the Ni(Pt)-silicided MOSFETs has been improved due to the enhanced stability of the Ni(Pt)Si as compared to the pure NiSi at relative high silicidation temperatures.