Nickel-Silicided Schottky Junction CMOS Transistors With Gate-All-Around Nanowire Channels

Journal article

Peer reviewed

E. J Tan, K. L Pey, N Singh, G. Q LO, D. Z Chi, Y. K Chin, L. J Tang, P. S Lee and C. K. F HO

IEEE electron device letters, Vol.29(8), pp.902-905

01/08/2008

Abstract

Applied sciences

Electronics

Exact sciences and technology

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

Transistors

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Title: Nickel-Silicided Schottky Junction CMOS Transistors With Gate-All-Around Nanowire Channels
Creators - without role: E. J Tan - Nanyang Technological University
K. L Pey - Nanyang Technological University
N Singh - Institute of Microelectronics
G. Q LO - Institute of Microelectronics
D. Z Chi - Institute of Materials Research Engineering, Singapore 117602, Singapore
Y. K Chin - Nanyang Technological University
L. J Tang - Institute of Microelectronics
P. S Lee - Nanyang Technological University
C. K. F HO - Nanyang Technological University
Publication Details: IEEE electron device letters, Vol.29(8), pp.902-905
Publisher: Institute of Electrical and Electronics Engineers
Number of pages: 4
Identifiers: 9914321809846
Academic Unit: Engineering Product Development (EPD); Temasek Lab
Language: English
Resource Type: Journal article