Abstract
The effect of multiple-pulsed laser irradiation on Ni silicide formation in
Ni
(
Ti
)
∕
Si
system was studied. A layered structure consisting of both crystalline
Ni
Si
2
and Ni-rich Ni-Si amorphous phases with a protective
Ti
O
x
overlayer was formed after five-pulsed laser annealing at
0.4
J
cm
−
2
. Different solidification velocities caused by a variation in the atomic concentration across the melt have led to the formation of this layered structure. On the other hand, by increasing the number of laser pulses, a continuous layer of polycrystalline NiSi was obtained after a 20-pulsed laser annealing at
0.3
J
cm
−
2
laser fluence. Its formation is attributed to a better elemental mixing which occurred during subsequent pulses. Enhancement of surface absorption and remelting of the phases formed is proposed as the mechanism governing the continuous NiSi layer formation.