Logo image
Nonlinear optics in ultra-silicon-rich nitride devices: recent developments and future outlook
Journal article   Peer reviewed

Nonlinear optics in ultra-silicon-rich nitride devices: recent developments and future outlook

Dawn T. H. Tan, D. K. T. Ng, J. W. Choi, E. Sahin, B-. U. Sohn, G. F. R. Chen, P. Xing, H. Gao and Y. Cao
Advances in physics: X, Vol.6(1), 1905544
01/01/2021

Abstract

CMOS-compatible integrated optics devices nonlinear optics Ultra-silicon-rich nitride
Nonlinear integrated optics leveraging platforms with high nonlinear figure of merit offer energy efficient optical signal processing capabilities. Over the last five years, CMOS-compatible ultra-silico-rich nitride (USRN) has emerged as a promising platform on which to implement various nonlinear optics functions. Bandgap engineered to maximize the Kerr nonlinearity while maintaining two-photon absorption free behavior at telecommunications wavelengths, USRN possesses a nonlinear refractive index that is 100× larger than that in stoichiometric silicon nitride. In this article, we review the recent progress made in USRN-based nonlinear integrated optics devices. The impacts it has made spanning from high gain optical parametric amplification and observations of soliton effects in photonic waveguides and photonic crystal waveguide structures will be discussed. Finally, we assess the future outlook of CMOS-compatible USRN-based nonlinear optics.
url
https://doi.org/10.1080/23746149.2021.1905544View
Published (Version of record) Open

Metrics

1 Record Views

Details

Logo image