Novel low-voltage BiCMOS digital circuits employing a lateral p-n-p BJT in a p-MOS structure

Journal article

S. S Rofail, Y. K Seng and Kiat Seng Yeo

IEE proceedings. Circuits, devices, and systems, Vol.143(2), pp.83-90

01/04/1996

Abstract

Applied sciences

Electronics

Exact sciences and technology

Integrated circuits

Integrated circuits by function (including memories and processors)

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

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Title: Novel low-voltage BiCMOS digital circuits employing a lateral p-n-p BJT in a p-MOS structure
Creators - without role: S. S Rofail - Nanyang Technological University
Y. K Seng - Nanyang Technological University
Kiat Seng Yeo - Office of Provost
Publication Details: IEE proceedings. Circuits, devices, and systems, Vol.143(2), pp.83-90
Publisher: Institution of Electrical Engineers
Number of pages: 8
Identifiers: 9912504009846
Academic Unit: Office of Provost
Language: English
Resource Type: Journal article