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Optical, magnetic, and transport behaviors of Ge1-xMnxTe ferromagnetic semiconductors grown by molecular-beam epitaxy
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Optical, magnetic, and transport behaviors of Ge1-xMnxTe ferromagnetic semiconductors grown by molecular-beam epitaxy

W. Q. Chen, S. T. Lim, C. H. Sim, J. F. Bi, K. L. Teo, T. Liew and T. C. Chong
Journal of applied physics, Vol.104(6), 063912
15/09/2008

Abstract

Physical Sciences Physics Physics, Applied Science & Technology
The optical, magnetic, and transport behaviors of Ge1-xMnxTe (x = 0.24 and 0.55) grown by solid-source molecular-beam epitaxy are investigated. X-ray diffraction shows that Ge1-xMnxTe crystallizes in rocksalt structure. The temperature-dependent magnetization (M-T) for x = 0.55 sample gives a Curie paramagnetic temperature of theta(p) similar to 180 K, which is consistent with the temperature-dependent resistivity p(T) measurement. Anomalous Hall effect is clearly observed in the samples and can be attributed to extrinsic skew scattering based on the scaling relationship of rho(xy)alpha rho(1.06)(xx). The magnetoresistance of Ge1-xMnxTe is isotropic and displays a clear hysterestic loop at low temperature, which resembles that of giant-magnetoresistance granular system in solids. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2980276]

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