Abstract
For the first time, Patterned growth of boron nitride nanotubes is achieved by catalytic chemical vapor deposition (CCVD) at 1200 degrees C using MgO, Ni, or Fe as the catalysts, and an Al2O3 diffusion barrier as underlayer. The as-grown BNNTs are clean, vertically aligned, and have high crystallinity. Near band-edge absorption similar to 6 0 eV is detected, without significant sub-band absorption centers. Electronic transport measurement confirms that these BNNTs are perfect insulators,applicable for future deep-UV photoelectronic devices and high-power electronics.