Percolation resistance evolution during progressive breakdown in narrow MOSFETs

Journal article

Peer reviewed

V. L LO, K. L Pey, C. H Tung, D. S Ang, T. S Foo and L. J Tang

IEEE electron device letters, Vol.27(5), pp.396-398

01/05/2006

Abstract

Applied sciences

Electronics

Exact sciences and technology

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

Transistors

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Title: Percolation resistance evolution during progressive breakdown in narrow MOSFETs
Creators - without role: V. L LO - Nanyang Technological University
K. L Pey - Nanyang Technological University
C. H Tung - Institute of Microelectronics
D. S Ang - Nanyang Technological University
T. S Foo - Nanyang Technological University
L. J Tang - Institute of Microelectronics
Publication Details: IEEE electron device letters, Vol.27(5), pp.396-398
Publisher: Institute of Electrical and Electronics Engineers
Number of pages: 3
Identifiers: 9914225709846
Academic Unit: Engineering Product Development (EPD); Temasek Lab
Language: English
Resource Type: Journal article