Abstract
Sn-doped Ge-Sb-Te material was prepared by laser synthesis. It has a rocksalt crystal structure for Sn doping content less than
30
at.
%
. A phase change temperature tester was developed to
in situ
measure crystallization temperature and melting point of Sn-doped Ge-Sb-Te. The crystalliza-tion temperature of Sn-doped Ge-Sb-Te is close to that of
Ge
2
Sb
2
Te
5
while its melting point is much lower than that of
Ge
2
Sb
2
Te
5
. The melting points of
Sn
9.8
Ge
20.3
Sb
28.4
Te
41.5
and
Sn
18.8
Ge
19.5
Sb
25.3
Te
36.4
are 475 and
450
°
C
, respectively. The crystallization speed was tested by an ultraviolet light at pulse duration of
30
ns
. It exhibits a high crystallization speed.