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- Title
- Physically-based RF model for metal-oxide-metalcapacitors
- Creators - without role
- Chunqi Geng - Nanyang Technological UniversityKok Wai Chew - Chartered Semiconductor Manufacturing (CSM), Singapore, Republic of SingaporeKiat Seng Yeo - Nanyang Technological UniversityManh Anh Do - Nanyang Technological UniversityJianguo Ma - Nanyang Technological UniversityChee Tee Chua - Chartered Semiconductor Manufacturing (CSM), Singapore, Republic of SingaporeKai Shao - Chartered Semiconductor Manufacturing (CSM), Singapore, Republic of Singapore
- Publication Details
- Electronics letters, Vol.36(5), pp.425-427
- Identifiers
- 9911716809846
- Academic Unit
- Office of Provost
- Language
- English
- Resource Type
- Journal article