Post-breakdown conduction in ultra-thin HfO 2 films in MOS transistors

Journal article

Peer reviewed

E. Miranda, K.L. Pey, R. Ranjan and C.H. Tung

Electronics letters, Vol.43(19), pp.1050-1051

13/09/2007

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Title: Post-breakdown conduction in ultra-thin HfO 2 films in MOS transistors
Creators - without role: E. Miranda - Universitat Autònoma de Barcelona
K.L. Pey - Nanyang Technological University
R. Ranjan - Nanyang Technological University
C.H. Tung - Singapore Science Park
Publication Details: Electronics letters, Vol.43(19), pp.1050-1051
Number of pages: 2
Identifiers: 9914218509846
Academic Unit: Engineering Product Development (EPD); Temasek Lab
Language: English
Resource Type: Journal article