Abstract
The high programming current density of phase change memory (PCM) is an obstacle for its scaling and high density chip development. In this paper, an elevated-confined PCM (e-PCM) with self-aligned oxidation heater was proposed to reduce the programming current density by increasing the Joule heat and reducing heat loss simultaneously. 200 nm diameter size e-PCM with self-aligned TiWOx heater was fabricated and tested. The RESET current is 350 mu A with 100 ns pulse and the corresponding programming current density is 1.12 MA/cm(2). The low current density indicates this structure as a promising candidate for high density PCM chip applications. (c) 2014 AIP Publishing LLC.