Abstract
The dependence of optical and thermal properties of phase-change optical disks on the diffusion of sulfur atoms from ZnS-SiO2 dielectric layers into a GeSbTe phase-change recording layer was simulated, The influence of reactive sputtering parameters on the properties of GeN films has also been studied. Significant improvement in the direct overwriting cycles was achieved in the 4.7 GB digital versatile disk-random access memory (DVD-RAM) disk with a GeN inter-face layer after optimizing the sputtering parameters of the GeN film.