Abstract
This paper studies the effects of pulsed laser-induced annealing of TiN-capped
Co
∕
Si
bilayers with and without preamorphized Si substrate. For a low fluence of
0.2
J
∕
cm
2
, nonstoichiometry Co silicide with triple-layered structure is formed. On the other hand, highly textured
Co
Si
2
grains in (111) direction are formed for a high fluence of
0.7
J
∕
cm
2
. The highly textured
Co
Si
2
layer is monocrystalline and fully coherent with the (111) plane of the Si substrate. However, it has a large amount of microstructural defects throughout the layer. Competitive growth mechanisms between crystallization of homogenous intermixed layer and the nucleation from the melt boundary are discussed.