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Recommended Methods to Study Resistive Switching Devices
Journal article   Peer reviewed

Recommended Methods to Study Resistive Switching Devices

Mario Lanza, H-S Philip Wong, Eric Pop, Daniele Ielmini, Dimitri Strukov, Brian C. Regan, Luca Larcher, Marco A. Villena, J. Joshua Yang, Ludovic Goux, …
Advanced electronic materials, Vol.5(1), pp.1-28
01/2019
DOI: https://doi.org/10.1002/aelm.201800143

Abstract

Materials Science Materials Science, Multidisciplinary Nanoscience & Nanotechnology Physical Sciences Physics Physics, Applied Science & Technology Science & Technology - Other Topics Technology
Resistive switching (RS) is an interesting property shown by some materials systems that, especially during the last decade, has gained a lot of interest for the fabrication of electronic devices, with electronic nonvolatile memories being those that have received the most attention. The presence and quality of the RS phenomenon in a materials system can be studied using different prototype cells, performing different experiments, displaying different figures of merit, and developing different computational analyses. Therefore, the real usefulness and impact of the findings presented in each study for the RS technology will be also different. This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained. The idea is to help the scientific community to evaluate the real usefulness and impact of an RS study for the development of RS technology.
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https://doi.org/10.1002/aelm.201800143View
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