- Title
- Reply to: Mobility overestimation in molybdenum disulfide transistors due to invasive voltage probes
- Creators - without role
- Hong Kuan Ng - Agency for Science, Technology and ResearchDu Xiang - Fudan UniversityAdy Suwardi - Agency for Science, Technology and ResearchGuangwei Hu - Duke-NUS Medical SchoolKe Yang - Hong Kong Polytechnic UniversityYunshan Zhao - Nanjing Normal UniversityTao Liu - Fudan UniversityZhonghan Cao - National University of SingaporeHuajun Liu - Agency for Science, Technology and ResearchShisheng Li - National Institute for Materials ScienceJing Cao - Agency for Science, Technology and ResearchQiang Zhu - Institute of Materials Research and EngineeringZhaogang Dong - Agency for Science, Technology and ResearchChee Kiang Ivan Tan - Institute of Materials Research and EngineeringDongzhi Chi - Institute of Materials Research and EngineeringCheng-Wei Qiu - Department of Electrical and Computer Engineering, National University of SingaporeKedar Hippalgaonkar - Institute of Materials Research and EngineeringGoki Eda - National University of SingaporeMing Yang - Hong Kong Polytechnic UniversityJing Wu - Agency for Science, Technology and Research
- Publication Details
- Nature electronics, Vol.6(11), pp.839-841
- Publisher
- Nature Publishing Group UK
- Number of pages
- 3
- Identifiers
- 9912662609846
- Academic Unit
- SCI,MATH & Technology
- Language
- English
- Resource Type
- Journal article
Journal article
Reply to: Mobility overestimation in molybdenum disulfide transistors due to invasive voltage probes
Nature electronics, Vol.6(11), pp.839-841
01/11/2023
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