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Residual layer self-removal in imprint lithography
Journal article   Peer reviewed

Residual layer self-removal in imprint lithography

Jarrett Dumond and Hong Yee Low
Advanced materials (Weinheim), Vol.20(7), pp.1291-1297
04/04/2008

Abstract

Chemistry Chemistry, Multidisciplinary Chemistry, Physical Materials Science Materials Science, Multidisciplinary Nanoscience & Nanotechnology Physical Sciences Physics Physics, Applied Physics, Condensed Matter Science & Technology Science & Technology - Other Topics Technology
A new method for imprinting residual-layer free polymer micro- and nano structures, particularly 3-D structures with overhang, is demonstrated. This simple and versatile method induces self-removal of the residual layer by controlled failure of the patterned film along the edges of the imprinted features. Pristine overhang structures down to similar to 500 nm diameter are realized without exposure to plasma or chemical etchants.

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