Abstract
Both unipolar and bipolar resistive switchings are demonstrated on NiSi gate transistors after gate dielectric percolation. Nanoscale Ni filaments and oxygen ion conduction are found in the percolation path as the physical defects responsible for resistive switching. Memory cells can be fabricated together with the metal gate transistors for ease of integration. (C) 2010 American Institute of Physics. [doi:10.1063/1.3516466]