Abstract
In this letter, the authors study the importance of a low temperature anneal in the removal of crystalline defects resulting from pulsed laser annealing of preamorphized ultrashallow
p
+
∕
n
junction. Using an additional low thermal budget rapid thermal annealing at
600
°
C
for
60
s
, suppression of junction leakage current of two orders in a single-pulse laser annealing and one order in a ten-pulse laser annealing is achieved through a reduction of the residual crystalline defects that could not be annihilated by laser annealing.
p
-channel metal-oxide-semiconductor field effect transistors with good electrical characteristics can be obtained using pulsed laser annealing followed by a low thermal budget rapid thermal annealing.