Simple and accurate extraction methodology for RF MOSFET valid up to 20 GHz

Journal article

A. F Tong, K. S Yeo, L Jia, C. Q Geng, J.-G MA and M. A DO

IEE proceedings. Circuits, devices, and systems, Vol.151(6), pp.587-592

01/12/2004

Abstract

Applied sciences

Dielectric, amorphous and glass solid devices

Electronics

Exact sciences and technology

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

Transistors

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Title: Simple and accurate extraction methodology for RF MOSFET valid up to 20 GHz
Creators - without role: A. F Tong - Advanced RFIC (S) Pte. Ltd., 2 International Business Park, #10-11, The Strategy Tower 1, Singapore 609930, Singapore
K. S Yeo - Nanyang Technological University
L Jia - Nanyang Technological University
C. Q Geng - Advanced RFIC (S) Pte. Ltd., 2 International Business Park, #10-11, The Strategy Tower 1, Singapore 609930, Singapore
J.-G MA - Nanyang Technological University
M. A DO - Nanyang Technological University
Publication Details: IEE proceedings. Circuits, devices, and systems, Vol.151(6), pp.587-592
Publisher: Institution of Electrical Engineers
Number of pages: 6
Identifiers: 9912393809846
Academic Unit: Office of Provost
Language: English
Resource Type: Journal article